System for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules

ABSTRACT

An interconnect module and a method of manufacturing the same. The method of making an interconnect module on a substrate comprises forming an interconnect section on the substrate. The interconnect section comprises at least two metal interconnect layers separated by a dielectric layer. The method further comprises forming a passive device on the substrate at a location laterally adjacent to the interconnect section. The passive device comprises at least one moveable element comprising a metal layer. The method further comprises forming the metal layer and one of the at least two metal interconnect layers from substantially the same material.

RELATED APPLICATIONS

This application is a divisional application of co-pending U.S.application Ser. No. 10/897,271, filed Jul. 21, 2004 entitled “METHODAND SYSTEM FOR FABRICATION OF INTEGRATED TUNABLE/SWITCHABLE PASSIVEMICROWAVE AND MILLIMETER WAVE MODULES,” which is a continuation of U.S.application Ser. No. 10/127,341, filed Apr. 18, 2002 entitled “METHODAND SYSTEM FOR FABRICATION OF INTEGRATED TUNABLE/SWITCHABLE PASSIVEMICROWAVE AND MILLIMETER WAVE MODULES”, which claims priority to U.S.provisional application entitled “TECHNOLOGY PLATFORM FOR THEFABRICATION OF FIXED AND VARIABLE INTEGRATED PASSIVE DEVICES (IPDs) TOYIELD INTEGRATED TUNABLE/SWITCHABLE PASSIVE MICROWAVE AND MILLIMETERWAVE MODULES”, having Application No. 60/285,557, and a filing date ofApr. 19, 2001, each of which is incorporated by reference.

FIELD OF THE INVENTION

The field relates to the fabrication of integrated tunable and/orswitchable passive microwave and millimeter wave modules withinterconnects to other devices.

BACKGROUND

There has been an explosive growth in wireless communication and theemergence of commercial and consumer applications of radio frequency(RF), microwave, and millimeter-wave circuits and systems in a number ofareas. These areas include wireless personal communication and localarea networks (WLAN), satellite communications, and automotiveelectronics. Future personal and ground communications systems as wellas communications satellites impose requirements such as very low weightand low power consumption, and small volume. The decrease in size andweight, the ever increasing frequency as well as the trend towardgreater functionality of the communications systems, platforms arenecessitating the use of highly integrated RF front-end circuits.Continuing chip scaling has contributed a lot to this goal, at least tothe boost in the functionality of the devices or to the increase inoperational frequency of e.g. CMOS-based technologies. However today asituation has been reached where the presence of the expensive, off-chippassive RF components, whether tunable or not, such as high-Qcapacitors, high-Q inductors, resistors, switches, varactor diodes,high-Q resonators, and filters plays a limiting role.

Printed circuit boards have been used extensively as a technologyplatform to which these individual electronic components are mounted. Toprovide greater densities and more flexibility, sets of chips can bemounted on a separate packaging substrate. Various designs of thesesubstrates have been proposed, the major ones of which are described inthe book “Multichip Module Technologies and Alternatives”, D. A. Doaneand P. D. Franzon, Van Nostrand Reinhold, 1993. An example of suchsubstrate is the Multi-chip module substrate (MCM substrate) thattypically provides an interconnect facility or sometimes also integratedsimple passive devices such as resistors.

To provide tunable components with movable parts, e.g. switches,traditional semiconductor processing has been modified to producemicrometer devices and has come to be known as Micro electromechanicalSystems (MEMS). Generally, MEMS processing is non-conventional andseparate rather than integrated devices have generally been produced.

To provide a complete RF device/system various separate components haveto be brought together. A first approach is called the hybrid approach.This hybrid approach combines components, manufactured in varioustechnologies, each having its own purpose, specifications and targets,on a single technology platform, adapted for receiving andinterconnecting this variety of components. Any RF-MEMS variableIntegrated Passive Devices (IPDs) or any active circuitry, e.g. BiCMOS,GaAs or CMOS, are flip-chip assembled onto the platform, e.g. amicrowave MCM-D carrier substrate containing the interconnects and thefixed IPDs, such as resistors, operating in the RF and microwave regime.

Today there are three mainstream technologies that can be used as atechnology platform in such hybrid approach:

Ceramics-based (thick-film) technology, e.g., Low Temperature Co-firedCeramic (LTCC).

Thin-film based technology, e.g., Multi Chip Module (MCM) usingDeposited thin films (MCM-D).

Technologies based on the extension and scaling down of printed circuitboard (PCB) or printed wiring board (PWB) technologies, e.g., MCM-L(where the L stands for laminate) constructed of plastic laminate-baseddielectric and copper conductors.

The latter based technologies, i.e. PCB or PWB based technologies, aremost commonly used in low frequency digital applications, and are notvery suited for RF and microwave applications. The other two technologyplatforms, such as LTCC and MCM-D, can be suited for RF and microwaveapplications. Of these, LTCC allows the integration of capacitors,resistors and inductors in a single ceramic or glass-ceramic body. Thisis achieved by combining low-firing ferrite, dielectric and conductivematerials in a multilayer ceramic process with sintering temperaturesaround 850° C. MCM-D is a recently developed technology that is based onthin-film techniques as used in the semiconductor IC industry butapplied using different materials. Hereby, thin film MCM devices arefabricated by a sequential deposition of thin conductor and dielectriclayers on a substrate by, e.g., evaporation, sputtering, electroplating,chemical vapor deposition (CVD) and spin coating. The layers arestructured with standard photolithographic and etching or selectivedeposition. The second approach is called the monolithic approach. Inthis monolithic approach these Integrated Passive Devices or passivecomponents can be integrated in or on a semiconductor chip. However,despite many years of research, such on-chip passive components based onelectronic solutions, implemented and/or integrated in various RF-IC(Radio Frequency integrated circuit) technologies including BiCMOS, SiGeand GaAs, did not result in components with the high-quality offered bydiscrete passive components and which are required by most wirelessapplications.

A comparison of the different microwave IPDs technologies, alsoincluding the RFIC technologies, as outlined above, is presented inTable 1.

TABLE 1 Comparison of the different technologies for microwave IPDs.Performance Max. freq. Process- Tunable/ Metal W ± ΔW On-chip Tech. CostQ-factor (GHz) control Switches levels (μm) RF ICs MCM-D Cheap Q_(L) =30-150 50 Average No >2 10 ± 1 no substrate (glass) 1-1.5 USD/cm²RF-MEMS Cheap Q_(L) = 40 80 average Yes <2 10 ± 1 no substrate Q_(C) =50 (glass) (varicap) 0.5-1 USD/cm² LTCC Glass- Q_(L) > 40 10 poor No >3100 ± 2  no ceramic 1-1.5 USD/cm² III-V Very Q_(L) < 10 15 (FET) goodyes >4   1 ± 0.1 yes (GaAs) expensive 110 substrate, (HEMT) 30 USD/cm²BiCMOS Expensive Q_(L) < 8 50 good yes >1   1 ± 0.1 yes subst. (BiPSiGe)(HRS, SiGe), 10 USD/cm² III-V + Very Q_(L) < 10 <50 average yes >4 10 ±1 Yes MEMS expensive substrate

Based on this table, it is concluded that LTCC although applicable formicrowave Integrated Passive Devices (‘IPDs’) has certain drawbacks whenit comes to size, density as indicated by the line width W, and maximumoperating frequency. Further, the on-chip passive components based onRF-IC technologies (BiCMOS, SiGe or GaAs) do not offer the high-qualityas required by most wireless applications e.g. the Q-factor of theinductors is typically below 10, whereas Q-factors exceeding 30 aredesired. Compare this to MCM-D Q factors, which are around 50 for fixeddevices, e.g. both the capacitors and the inductors. One reason for theworse RF-behavior is the lossy substrates used in standard processes.Quality substrates such as High Resistive Silicon (HR-Si), GaAs and SOIsubstrates, needed for the manufacturing of active devices, are onlyavailable at a higher cost. Even in case of high quality substrates theRF-performance can be low. Due to the limited dimensions of theconductor wiring interconnecting the active and fixed passive devices onthe substrate dielectric losses can be high. Not only the RF-performancebut also the technology cost is an important issue. The cost for MCM-Dis around 1-1.5 USD/cm² (for a 7-mask process). This should be comparedto the cost of 10 USD/cm² for a standard BiCMOS process and an evenhigher cost of 30 USD/cm² for a GaAs process. It should be said though,that the latter two processes not only offer integrated passives butfull integration with active circuitry as well. Development of passivedevices in such technology is however expensive as such changes mightaffect the overall technology, including the active devices. Thedevelopment of a monolithic process is a complex and time-consumingprocess. Due to the shortcomings of RFIC technologies, ever increasingpressure is placed on the need to develop technologies for thefabrication of “integrated passive devices (IPDs)” operating in the RFand microwave regime. The thin-film integrated technologies generallyprovide the level of precision, range of component values, performanceand functional density at a reasonable cost, which makes thesetechnologies suited for the fabrication of microwave IPDs, thus allowinga more integrated, smaller, and lighter implementation of a given RFfunction compared to the monolithic approach

IPDs for today's wireless communication systems not only encompass fixedparameter value components, but also variable parameter value componentssuch as RF switches or varicaps. As Table 1 indicates, variable ortunable IPDs can be fabricated in several technologies. As elucidatedearlier however, the RFIC technologies are not suited for fabricatinghigh quality IPDs, which limits the field of application of thesetechnologies. The potential of RF-MEMS for miniaturization andintegration, makes MEMS technology into a leading technology for therealization of variable IPDs, e.g., filters, switches, capacitors,inductors, with the potential of fabricating tunable/switchable modules,e.g. adaptive matching networks. The introduction of tunability andswitchability in RF communication front-ends opens a way to designinnovative, re-configurable RF transceiver architectures, likemulti-band transceivers, which will be needed in present andnext-generation wireless communication systems. It is expected thatRF-MEMS technology will solve some of the most troublesome problemsrelated to the use of discrete passive tunable/switchable components.The technology can yield small, low weight and high performancetunable/switchable RF components to replace some of the bulky, expensiveand unwanted discrete passive RF components. Basically these RF-MEMScomponents contain movable parts and/or suspended parts, e.g., suspendedinductors or transmission lines. All these features as offered byRF-MEMS make this technology a very attractive choice for thefabrication of variable IPDs. In addition variable RF-MEMS passivecomponents in some cases display superior performance characteristics asopposed to their semiconductor counterparts.

TABLE 2 Comparison of typical performance characteristics of RF switchtypes GaAs MMIC (MESFET type) PIN diode RF-MEMS switch Insertion loss(@2 GHz) 0.51 dB 0.6 dB <0.2 dB Isolation (@2 GHz) −25 dB −50 dB −35 dBReturn loss (@2 GHz) −20 dB −10 dB −35 dB Max. RF frequency 10 GHz 10GHz 80 GHz Switching time tens of ns hundreds ns Hundreds of ns RF powerhandling 30 dBm 30 dBm 30 dBm (1W) Actuation/bias voltage +5 V¹ +5, −5V >12 V Standby power tens of micro W few mW “zero” consumption IP3 37dBm 44 dBm >66 dBm² Die size (SPDT³ switch) 1.1 × 1.1 × 0.7 mm³ 0.8 ×1.3 × 0.7 mm³ 2 × 1 × 0.7 mm³ Body size <3.5 × 3.5 × 2 mm³ <3.5 × 3.5 ×2 mm³ <4 × 2 × 2 mm³ ¹TTL compatible bias voltage. ²Beyond the limits ofmeasurement equipment (IP3 extrapolated as better than 66 dBm). ³SinglePole Double Throw, e.g., implemented as a toggle for antenna switchingor T/R switching.

An example is presented in Table 2 in which the performancecharacteristics of different types of miniature RF switches arecompared. The table clearly shows the outstanding performance of RF-MEMSswitches in terms of insertion loss, power consumption and linearity.For instance, the insertion loss of RF-MEMS switches is typically around0.2 dB in the range 1-10 GHz, whereas FET type switches exhibit aninsertion loss around 1 dB in the same frequency regime.

Table 3 presents an indicative performance overview of the differenttechnology platforms implementing RF-MEMS. MEMS processing and materialsare closely linked to semiconductor processing and materials hence, inthe monolithic approach the MEMS part is processed with thesemiconductor substrate, e.g. on top of the semiconductor device. Anexample of such integration is given in <<Monolithic GaAs PHEMT MMIC'sintegrated with high performance MEMS Microrelays <<by E. A. Sovero etal. (IEEE MTT-S IMOC 1999 Proceedings, Brazil, p 257). Such processinghas the disadvantage that a MEMS device consumes relatively large andthus expensive chip area. Further the process freedom of such monolithicintegrated IPD is limited. As was already the case for the fixedpassives already implemented in such fully integrated process, e.g.CMOS, the characteristics of the underlying active devices may not bechanged by the subsequent processing of the passive devices. Suchprocess restriction will limit the type and number of IPD feasible inthis monolithic approach.

TABLE 3 Comparison of the different technology approaches implementingRF-MEMS. Technologies for Max. Range of Degree of Cost of RF-MEMS and RFavailable Interconnect miniaturization Tunable RF Time to Technologyfixed passives Freq. passives flexibility (size, weight) module marketlife Hybrid low wide High low medium Short Long (LTCC, MCM-D) Monolithichigh limited Medium high high Long Short (GaAs MMIC + RF- MEMS)

Although the RF-MEMS technology has clear advantages as explained above,the technology also displays drawbacks. For instance, theinterconnection levels are very limited and so are the number andquality of fixed passives.

Hence, it can be said, that none of the aforementioned technologyplatforms offers a flexible, cost-effective solution for the fabricationof a wide range of fixed or tunable high quality RF and microwave IPDs.It is an object of the present invention to provide such a platform anda method of making it.

SUMMARY OF CERTAIN INVENTIVE ASPECTS

One aspect is an interconnect module device including a substrate, andan interconnect section formed on the substrate, the interconnectsection including a plurality of fixed passive devices formed in atleast a portion of at least first and second metal interconnect layersseparated by a dielectric layer, where the fixed passive devices areconnected to each other by at least one of the first and secondinterconnect layers. The device also includes a passive device sectionformed on the substrate located laterally adjacent to the interconnectsection including one or more variable passive devices, each includingat least one moveable element.

Another aspect is an interconnect module device, including a substrate,and an interconnect section formed on the substrate, the interconnectsection including at least first and second metal interconnect layersseparated by a dielectric layer, where the minimum distance between thesubstrate and the second layer is greater than the minimum distancebetween the substrate and the first layer. The device also includes anRF microelectromechanical (MEMS) device formed on the substrate at alocation laterally adjacent to the interconnect section, where the RFMEMS device includes at least one moveable element formed in at leastone of the first and second interconnect layers, and where theinterconnect section includes a plurality of fixed microwave integratedpassive devices (IPDs) connected with at least one of the first andsecond interconnect layers.

Another aspect is an interconnect module device, including a substrate,and an interconnect section formed on the substrate, the interconnectsection including at least first and second metal interconnect layersseparated by a dielectric layer, where the minimum distance between thesubstrate and the second layer is greater than the minimum distancebetween the substrate and the first layer. The device also includes apassive device formed on the substrate at a location laterally adjacentto the interconnect section, where the passive device includes at leastone moveable element formed in at least one of the first and secondinterconnect layers, where the passive device is configured to beelectrically connected between first and second electrical components,and the moveable element is configured to communicate a data carryingsignal between the first and second electrical components.

Another aspect is an interconnect module device, including a substrate,and an interconnect section formed on the substrate, the interconnectsection including a first interconnect metal layer, a first intermediatedielectric layer formed on the first interconnect metal layer, a secondinterconnect metal layer formed on the first intermediate dielectriclayer, a second intermediate dielectric layer formed on the secondinterconnect metal layer, and a third interconnect metal layer formed onthe second intermediate dielectric layer. The device also includes apassive device section formed on the substrate located laterallyadjacent to the interconnect section, the passive device sectionincluding a variable passive device including at least one moveableelement, where the moveable element is formed from the same material asone of the interconnect metal layers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a cross section of a conventional MCM-D substrateillustrating the interconnect levels and the fixed passives devices.

FIG. 2 is a cross section through a device according to an aspect thepresent invention showing variable passive devices formed in the MCM-Dtechnology and sealed by means of zero-level packaging.

FIGS. 3 a, 3 b, 3 c, 3 d, 3 e, 3 f, 3 g, 3 h, 3 i, 3 j, 3 k, 3 l, 3 m, 3n, 3 o, 3 p, 3 g, 3 r, 3 s, and 3 t (collectively hereinafter referredto as “FIG. 3”) show intermediate device cross sections illustrating aprocess sequence according to an aspect of the present invention.

FIG. 4 flow chart showing the process steps of the process sequence ofwhich FIG. 3 is a specific example, according to an aspect of theinvention.

FIG. 5 is a top view of an RF MEMS switch.

FIGS. 6 a and 6 b are a cross section showing an embodiment of theinvention, only using two levels of interconnect.

FIGS. 7 to 11 is a schematic representation of various embodiments ofthe invention.

FIGS. 12 and 13 show two alternative methods of attaching a module madein accordance with the present invention to other semiconductor devices.

Table 1. Comparison of different prior art technologies for microwaveIPDs.

Table 2. Comparison of typical performance characteristics of RF switchtypes processed using prior art technologies.

Table 3. Comparison of different prior art technology approachesimplementing RF-MEMS.

DETAILED DESCRIPTION OF CERTAIN INVENTIVE EMBODIMENTS

The present invention will be described with reference to certainpreferred embodiments and drawings but the present invention is notlimited thereto but only by the claims. In particular in the followingthe material BCB will be described for use as the interlevel dielectricmaterial. Other materials may be used as known for instance from thebook by Doane and Franzon mentioned above.

The concept of integration of passive components is to combine variouspassive elements onto one substrate, thereby creating added value interms of cost, miniaturization, reliability, functionality andperformance. The present invention provides a platform capable ofsimultaneous forming and/or integrating a large number of fixed andvariable passive devices, whereby a variable device has at least onemoveable component or element. Preferably this platform also providesthe integration of active devices in a flexible, easy and adaptable way.The combination of active devices and of passive devices is done in acost-effective way. Such a device may be formed on an economicalsubstrate such as glass, can have a performance Q factor above 30 forboth inductors (QL), e.g. between 30-150, and for capacitors (Qc), e.g.of about 50, has an operating frequency up to 80 GHz and has at leasttwo metal layers.

In a preferred embodiment the present invention high integration levelsare achieved for IPDs through the incorporation of RF-MEMS components ina microwave MCM-D substrate. The MCM-D technology as used with thepresent invention allows at least the fabrication of followingstructures/components:

Lumped Element Structures:

these are structures that are physically much smaller compared to thewavelength of the signals. These structures include:

Flip chip and wire bond connection pads;

Line bends and connection;

Fixed passive components: resistors, capacitors and inductors; and

Spiral baluns.

Distributed Elements Structures:

these are structures that are a significant fraction of, or larger thanthe wavelength of the signals:

Transmission lines;

Coupling structures, e.g., Lange couplers, ring couplers, and othersimilar couplers;

Line baluns; and

Power dividers/splitters.

The MCM-D technology as used with the present invention can define amicrowave design platform taking care of the high frequencyinterconnects and moreover, offers a readily available library of IPDssuch as fixed RF capacitors, inductors and resistors, transmissionlines, quarter-wave stubs, etc. A basic component library can be madeavailable which eases design and development of new RF-modules. MCM-D issuitable for at least up to 50 GHz operation. The microwave build-upstructure of an existing MCM-D technology is shown in FIG. 1. As can beseen, this build-up consists of integrated resistors (40) and capacitors(35-36-37) on the substrate (1), a thin film (low K) dielectric layer(7) followed by a thick copper interconnection layer (9-10). This layercontains the main interconnect lines (41) in the form of so-calledcoplanar wave guide (CPW) structures. This layer is also used to realizethe high-Q spiral inductors (42). This layer is followed by a nextdielectric layer (12), which acts also as a passivation layer for thestructure. The top metal layer (13-14-15) is used for component attachand may also be used to realize thin film capacitors with the underlyingmetal layers.

MCM-D as used with the present invention allows the fabrication of anintegrated system maintaining maximum RF performance, including highdensity packaging and testing algorithms. This allows integration ofentire RF front-end circuits of wireless communication systems onto asingle package.

One aspect of the present invention is to provide an MCM-D/MEMSinterconnect platform, which allows the integrated fabrication of thefixed and variable IPD's to yield stand-alone interconnect modules orsingle-chip or multi-chip tunable/switchable modules offering improvedfunctionality. As opposed to the hybrid approach in which flip-chipinterconnection of variable or moveable passive devices is used tointroduce RF-MEMS IPDs, in an aspect of the present invention the fixedand variable RF-MEMS IPDs are integrated with fixed MCM-D IPDs into thesame process flow. In other words, a fully integrated solution for alarge range of fixed and variable microwave and RF passives is obtainedin an MCM substrate. One example of such a device is shown schematicallyin FIG. 2. In this way flip-chip of RF IPD assembly operations areavoided or severely reduced and therefore cost is reduced. Moreover, thewafer-level or O-level package of the RF-MEMS device(s) is made simpleras shown in FIG. 2 as the sealed device can be connected using theinterconnectivity of the MCM-D substrate while the MDM-D dielectriclayers insulate the solder ring of the 0-level packaging from the MCM-Dinterconnect levels. Furthermore, monolithic integration will allowhigher operating frequencies. For example, the bump used for a flip-chipinterconnect introduces an inductance that cannot be ignored at veryhigh frequencies. A process flow in accordance with the presentinvention produces variable impedance RF-MEMS components, such asswitches and varicaps combined with interconnects which allow connectionto other devices. MEMS devices are known generally from “The MEMSHandbook”, M. Gad-el-Hak, CRC Press, 2001. Moreover, these RF-MEMScomponents can be integrated with a multitude of fixed value RFcomponents, such as inductors, capacitors and resistors, to yieldcomplete passive RF systems on a chip (SoC). Further, hybrid integrationthrough flip-chip assembly of ASICs is possible resulting in active RFsystems on a package (SoP). It allows the flip-chip hybrid integrationof RF-IC's to produce a single package solution of a complete RF system,e.g. a transceiver for mobile communications.

In one aspect of the present invention high quality fixed and tunablepassive devices combined with interconnects are provided within a singleprocess flow resulting in a substrate that can serve as platform for theassembly of the active circuitry.

The variable passive components which can be integrated on a substratein accordance with the present invention include without limitation:digitally encoded variable capacitors (consisting of fixed valuecapacitors and MEMS, that is, variable capacitors), switches withoptional on-chip biasing networks, adaptive matching networks, entire(true time delay) switched line phase shifting networks (composed ofRF-MEMS switches, CPW lines and biasing components on a single die),switching matrices (composed of RF-MEMS switches, interconnected throughmultilevel CPW lines), switched filter banks (composed of RF-MEMSswitches, fixed frequency filters either MCM-D LC type or mechanicalfilters, CPWs and biasing components).

The present invention is based on modifying the processing steps andmaterials of conventional MCM processing to include steps such assacrificial layer etching to manufacture tunable, “movable” or moregenerally “mechanically variable” devices as well as interconnects.Typical moveable elements are beams, especially cantilever beams,membranes and bridges and all other elements which can be made bydeposition of layers followed by patterning. Local hermetic sealing asrequired for switches, filters and tunable capacitors can also beprovided.

In accordance with the present invention the MEMS fixed or variableIPD's are formed together with the MCM-D fixed IPD's and theinterconnect layers in the thin film layers of the MCM-D stack. TheMCM-D flow is adapted to allow the optimized integration of these MEMSIPD's. This change in process flow accounts for the use of materialsrequired for optimization of the MEMS IPD otherwise the processing ofthe MEMS IPD might be restricted by the material properties of the MCM-Dplatform. A mutual influence on processing conditions is then present.This approach may be also labeled as dedicated, flexible or modularintegration of MEMS IPD in the MCM-D stack. In this approach a selectionof materials is made to provide acceptable variable IPD. Additionaldedicated materials having the desired properties can be introduced insuch a way that these dedicated materials do not deteriorate the MCM-Dmaterials and in turn that the properties and characteristics of thesenewly introduced materials are not influenced by further processing ofthe MCM-D stack.

Preferably, the MEMS fixed or variable IPD's are formed together withthe MCM-D fixed IPD's in the thin film layers of the MCM-D stack in asingle process sequence. The MCM-D process flow is fully exploited tomanufacture the MEMS IPD's, however the flow is not changed. In order tosimultaneously form the MEMS and MCM-D IPD only changes in the layout,i.e. lithographic mask info, are necessary to selectively or locallyform or remove the desired layers.

A preferred embodiment is illustrated in FIG. 3 represented as crosssections of devices produced in accordance with a process flow shown inFIG. 4 outlining the basic process flow of the MCM-D+technology based onthe full integration of RF-MEMS into the existing MCM-D. The RF-MEMSbased variable IPDs are fully embedded in and simultaneously processedwith the MCM-D fixed IPD and interconnects or wiring, thereby making useof already present material layers such as Ta₂O₅, BCB, Ti/Cu/Ti, etc. Asthe multilayer thin film MCMD technology is the starting point thisimplies in this preferred embodiment only limited flexibility withrespect to the choice of materials for the variable IPDs is required toachieve a good performance. For instance, limited freedom is given forvarying the thickness of certain layers. An advantage of the fullyintegrated process flow is a minimum number of masks and thus minimalcost.

The sequence chart given in FIG. 3 shows a preferred embodiment in whichMCM-D and MEMS devices are manufactured in a single process flow. In thefigure the left hand side of each cross-section shows the constructionof typical MCM-D elements, e.g. a metal interconnect, insulating layers,resistors, inductors and capacitors, whereas the right hand side showsthe development of a typical MEMS device with a movable element, e.g. aswitch or switch banks.

In step 1 a substrate 1 is provided. This can be a suitable MCM-Dsubstrate such as quartz, or could be a semiconductor substrate such asmonocrystalline silicon. It is preferred in some devices if thesubstrate 1 is an insulating substrate. A non-semiconductor substratemay be used which may be preferred because of its lower cost. In step 2,a first metal layer 2, 3, 4 is formed, e.g. by sputtering or othersuitable deposition technique. An example would be a multilayersputtering process to deposit a TaN (tantalum nitride) layer 2 of 270 nmthickness, an aluminum layer 3 of 1 micron and a second tantalum nitridelayer 4. In step 3 a first dielectric layer 5 is formed, e.g. 300 nmtantalum oxide formed by anodizing the top layer 4 of tantalum nitride.The advantage of using tantalum oxide is that it has a high dielectricconstant and therefore large capacitors can be made smaller and morecompact. An alternative is to use a nitride insulating layer. In step 4a second metal layer 6 is formed, e.g. by sputtering 1 micron ofaluminum. Step 5 is the first step in which the processing is altered sothat specific and dedicated structures are formed for the MEMS and theMCM devices. On the MCM side a capacitor will be formed and the firstmetal layer 3 exposed for the formation of resistors. On the MEMS side aswitch will start to be formed. Firstly, a photoresist layer isdeposited and patterned photolithographically using a first mask todefine the capacitor stack on the MCM side and the contact area of theswitch on the MEMS side. The second metal layer 6 is etched, e.g., by awet etch, the first dielectric layer 5 is then a dry etched using thepatterned second metal 6 as hard mask etch to form capacitor dielectriclayer 36. the non-anodized part of the second tantalum nitride layer 4is dry etched selfaligned to the upper layers. In step 6 a secondphotoresist is deposited and patterned photolithographically using asecond mask to define and outline resistors on the MCM side and tocontinue forming the switch on the MEMS side, e.g. the aluminum layer 3is wet etched and the tantalum nitride layer 2 is then dry etched usinglayer 3 as hard mask. In this step 6 also the bottom electrode (37) ofthe capacitor is also defined. In step 7 a third photoresist isdeposited and patterned photolithographically using a third mask to forman interconnect line 41, complete the resistor 40 and to form a ring onthe capacitor, defining then the top electrode 35, on the MCM sidewhereas on the MEMS side, the second metal layer 6 is removed. Toachieve this the aluminum layer 3 on top of the interconnect line 41 iswet etched in the region which forms the resistor 40, the aluminum layer6 on top of the capacitor is wet etched to form the ring on thecapacitor whereas the aluminum layer 6 on the switch is wet etched toexpose the dielectric layer.

A top view at this point is shown in the bottom figure of step 7,whereas the top figure shows a cross-section along the line A-A.

The definition of the first metal layers in step 1-7 may result in theformation of fixed passive devices such as resistors, capacitors,interconnections, coplanar wave guides on either the MCM or the MEMSside of the module. In the next step 8 a first level of interleveldielectric (7) is deposited, e.g. a spun BCB layer of 5 micron thicknessis applied. This layer planarizes the surface. This layer is used toprovide insulation and can also be used to make capacitors. In step 8this BCB layer 7 is spin-coated over the substrate. Then a fourthphotoresist may be deposited and patterned photolithographically using afourth mask. If a photosensitive BCB is used this layer 7 may bedirectly photolithographically patterned (using the fourth mask) withoutan additional photoresist layer. Openings or via's 8 are defined in thislayer to contact the passive elements obtained during the previousprocessing on the MCM side, e.g. the capacitor top electrode 35, theterminal 41 of the resistor 40. Normally these openings are lying withinthe perimeter of the passive devices. At this stage in the processingthe via (fourth) mask is also adapted to remove the BCB dielectric layer7 from parts of the MEMS elements, e.g. to define the signal line 31 atthe switch location. An aspect of the present invention is that an areais defined in which the first dielectric layer (the BCB layer 7) islocally removed to expose thereby an area defining a window in whichMEMS devices or parts thereof will be further developed. The bottomfigure in step 8 shows a top view of the device at this stage. The topfigure in step 8 is a section along the line B-B. As shown in step 9 ametal layer 9 is deposited, e.g. a 30 nm sputtered titanium layercovered by 150 nm copper layer, used as seed layer for electroplatingthe metal layer 10. In step 10 a fifth resist 11 is applied as a platingresist and patterned using a fifth mask to mask out the structures thatshould not be plated with the next metal layer 10. The plating resistmay be applied by spinning. The plating resist pattern is the inverse ofthe next metal interconnect pattern and inductor pattern if inductorsare to be included in the design. The MEMS element within the windowformed in the BCB layer in step 8, will also be covered during coatingof the plating resist layer 11. The MEMS device will be protected fromthe subsequent metal 10 (e.g. copper) plating although the initialwindow or opening formed in the first BCB layer in step 9 may bepartially filled with metal 10 during this subsequent metal plating stepin the areas of the initial opening not covered by the plating resist instep 10. After the removal of the plating resist the MEMS element willbe still exposed in the window and uncovered by the BCB layer 7 and bythe subsequent metal layer 10. Accordingly, in step 11 a metal layer 10is electroplated onto the complete device, e.g. 3 microns of copper, inthe areas not covered by the plating resist 11. This metal layer 10 canform an inductor 43, a second level interconnect line 42 (the firstlevel is item 41) a the ground line of the CPW interconnect: the groundline 32 parallel with the signal line 31 of the CPW These items areexposed and freed by removing the plating resist 11 in step 12, e.g.using acetone. By removing the plating resist from the area comprisingthe MEMS element under construction a cavity 34 is created in which thisMEMS element is located. Also portions of the metal layer 9 applied instep 9 may be etched using a wet etch for the copper layer-part and adry etch for the titanium layer-part, to remove the metal 9 where it isin contact with the MEMS device under construction. The metal 9 is thusat least removed within the cavity 34. The thickness of the copper layer10 is much larger than the thickness of the copper layer-part of metallayer 9 applied in step 9 and therefore an insignificant amount of layer10 is etched in this process. The result of this processing step 12 isthat a part of the MEMS element can be a metal layer 10 at the bordersof the cavity 34. In the MEMS device as depicted, this bottom conductivepart of the MEMS switch element (33C) is part of the signal line 31. TheCPW line 32 can be seen in the top view of the device shown in FIG. 5and this CPW line extends from one end of the window to the other end,while along the line A-A′ in this figure the sides of the CPW line 32are situated within the perimeter of the window.

In step 13 a second dielectric layer 12 is applied, e.g. by spin-coatingwith a second BCB layer. The opening 34 in the BCB layer 7 containingthe MEMS element and the openings in between the copper plated lines arefilled (e.g. between 42 and 43 in step 13). This second BCB layer 12will planarize the surface, insulate the various interconnect levels andalso act as a sacrificial layer on the MEMS side. It can also be used toform the dielectric of a capacitor. The layer 12 isphotolithographically patterned using a sixth mask. The exposed areaswill form a bonding position (17) to the second interconnect layer (42)and to a part (33 b) of a metal bridge (33) of the MEMS device (thebridge is a moveable element). The layer 12 will be removed aligned toand overlapping the cavity 34, so that the metal line 32 at the borderof the cavity 34 is exposed. In step 14 a seed layer 13 is applied, e.g.sputtering of 30 nm titanium and 150 nm copper. The last metal layer isformed during steps 14-17, which can be labeled as the back-endprocessing part of the MCM-D flow, but as was done in step 10 the MCM-Dmask defining the pattern of the plating resist 16 is adapted. In step15 a plating resist layer 16 is applied and patterned with a seventhmask. In this step the plating resist is removed in an areasubstantially on top of and overlapping the MEMS element and a thickmetal layer 14, 15 is formed overlapping the MEMS element, e.g. byelectroplating a 2 micron copper layer and a solder stack comprising anickel/gold/lead/tin layer. In step 16 the plating resist is removedwith a solvent such as acetone and portions of the copper-seed metallayer 13 applied in step 14 are removed by wet etching and coplanarportions of the titanium layer-part of metal 13 applied in step 14 areremoved by dry etching. To release the variable passive device,comprising at least one displaceable or movable element or part, the2^(nd) dielectric layer 12 deposited in step 13, is removed locally instep 17 to form a cavity 34. This BCB layer 12 acts a sacrificial layerin conventional MEMS processing. By locally removing the BCB layerfreestanding elements are created of the MEMS device such as a bridge.To prevent that BCB is removed everywhere a protective layer isdeposited and patterned using an eighth mask. After the Selective LayerEtch (SLE) of step 17 this protective is selectively removed withoutaffecting the materials already present on the MCM-D+platform. If in theadditional step 17 the second BCB layer 12 is removed, e.g. by selectivelayer etching (SLE), the patterned thick metal layer 14-15, overlappingat least along one direction the underlying MEMS element, will bereleased. A freestanding metal structure 33 being the movable/variablepart of the MEMS element is obtained. The thus manufactured device canbe sealed from the outside world by means of an integrated zero-level(O-level) packaging technique.

The MEMS switch manufactured by the above method may be a shunt switchimplemented on a co-planar waveguide (CPW) and in essence behaves as acapacitive switch. It displays two states, one characterized by a highcapacitance and another by a low capacitance. The switch consists of asuspended movable metal bridge or membrane 33, which is mechanicallyanchored and electrically connected to the ground of the CPW. When thebridge is up, the capacitance of the signal line to ground is low andthe switch is in the RF-ON-state, i.e., the RF-signal freely passes fromone side of the CPW to the other side. Upon activation, the bridge pullsdown onto a dielectric layer placed locally on top of the signal line31. The switch thus changes its state, the capacitance becomes high andthe switch is in the RF-OFF-state, i.e. the RF-signal is now “shorted”to ground. The DC actuation voltage at which the switch changes state iscalled the “pull-in voltage”. The pull-in voltage for the series switchshown in FIG. 3 can be close to 30V. In operation, the DC controlvoltage and the RF signal are superimposed and applied to the signalline 31. Other devices which can be made by adapting the abovemanufacturing method include:

switches (SPST, SPDT, SPMT);

variable/tunable capacitors;

mechanical (MEMS) resonators;

and a multitude of combinations of passives or (simple)tunable/switchable modules:

tunable LC tanks;

tunable LC filters;

tunable/switchable transmission line resonators;

tunable/switchable transmission line filters;

mechanical (MEMS) filters;

LC matching networks;

MEMS-based true time delay phase shifters;

switch (LC, stripline and mechanical) filter banks;

tunable “inductors” (by varying the capacitive load on the inductors);and

LC tunable filters and a single pole double throw (SPDT) switch,

with integrated buried RF feedthroughs, as schematically shown in FIG.2. With O-level packaging is understood the formation of a sealed cavityon the substrate, i.e. MEMS substrate, MCM-substrate, itself. The solderring (18) can either be processed on the capping wafer (20) or on thetop surface of the MCM-D+device wafer (1). With 1-level packaging isunderstood the packaging or mounting of the chip or device in a packageor housing followed by the sealing of the package or housing. Thepackage can then be mounted e.g. the MCM-substrate or other suitabletechnology platform. Contrary to this FIG. 2 illustrates a O-levelpackage, according to the present invention. A series switch (33) isformed as a variable passive device on an MCM-D substrate (1) or devicewafer in accordance with the above-described process. This MCM-Dsubstrate and/or the surface or top layer of the MCM-D stack forms oneside of the cavity (19), e.g. the bottom side of the cavity (19) in FIG.2. A capping element (20), e.g. a capping chip, is placed over theseries switch (33) forming another side of the cavity, e.g. the top sideof the cavity. Both sides, top and bottom in FIG. 2, of the cavity areconnected by e.g. a solder ring (18), shown by the columnar crosssection of the solder sealing ring in FIG. 2, to hermetically seal thecavity. The switch is encapsulated in a cavity formed by the MCM-Dsubstrate (1) and/or the MCM-D stack, a capping element (20) and asealing element (18) connecting the substrate and/or MCM-D stack and thecap layer. This sealing element is in contact with the capping element(20) and the surface of the substrate or MCM-D stack along its entireperimeter. The sealing element (18) bonds the capping element (20) tothe MCM-D substrate (1) and/or stack. The sealing element can be soldermaterial, e.g. Pb/Sn, as disclosed in EP0951069 “Method of fabricationof a microstructure having an inside cavity” by H. Tilmans, et al. Thesealing element can be a resin, preferably BCB. The BCB can be dispensedor deposited and subsequently patterned along the perimeter of thecavity to create a ring of BCB. The capping element can be attached andfixed to this ring of BCB, forming the sidewalls of the cavity. Thecapping element (20) can be placed on top of the MCM-D stack, in directcontact with the BCB dielectric layer or a ring of BCB localized in acontinuous geometrical pattern or curve on the top surface of the MCM-Dsubstrate. The capping element (20) can be a membrane over the cavityformed in the MCM-D stack. As shown in FIG. 2 the electrical contactbetween the device within the cavity, e.g. an electrical switch (33),and the outside world can be made in a metal layer (41) embedded in theMCM-D dielectric stack. This metal layer can be the aluminum layerpatterned in step 7 or 11 of FIG. 3. The conductive connection orfeed-through between the encapsulated device (33) and the other deviceson the same technology platform (1) doesn't affect the sealing of thecavity as no electrical contact is made between the solder sealing ring(18) and the metal wiring (e.g. 41) thanks to the dielectric material(12) surrounding this conductive pattern. The surface of the MCM-D stackon which the solder ring is formed is planerized by the BCB layers (7,12) used in the build-up of the MCM-D stack and offers a substantiallyflat surface on which the connecting material of the connecting elementcan be deposited along a curve. As shown in FIG. 2 the connecting metalis used as the signal line of a coplanar wave guide (CPW) to transportan RF signal from a chip to the cavity and vice-versa.

In the above embodiments two interdielectric layers (7,12) and threemetal layers (2,3,4,6-9,10-13,14,15) have been described to form theinterconnect portion of a device in accordance with the presentinvention which is located adjacent laterally to a MEMS device includingat least one moveable element. However, the present invention is notlimited to this number of layers. A device in accordance with anembodiment of the present invention is shown in FIG. 6 in which only twointerconnect layers and one interlevel dielectric layer are used to formthe interconnect section. At the first interconnect level the followingmay be provided: an optional resistor 40 (using layer 2, the resistor isnot an essential element in the MCM-D microwave circuit), a capacitor35, 36, 37 with a bottom electrode 37 (using layers 3-2), dielectric 36(using layers 5) and a top electrode 35 (using layer 6), a firstinterconnect layer 41 (using layers 2-3). Via's 8 etched into the BCBdielectric layer 7 to connect the capacitor top and bottom electrodes(35, 37) and/or the resistor (40) and/or a coil inductor 45. A CPW line32 is formed in the second metal interconnect layer 9, 10 (level 42) andthe coil 45 which feeds the signal from the capacitor 35, 36, 37 to thebridge (33) is also formed in metal layers 9,10. In the variable passivedevice section on the right part, the bottom part of the switch 33 c isformed from the same layers as the capacitor although the top electrode35 is here optional and depends on the type of switch. Only the bottomelectrode 37 and the dielectric 36 are usually used. The bridge metal 33is formed from the 2nd metal interconnect level (using layers 9-10). Thebridge feet 33 b corresponds to the via 8 formed through the BCBdielectric layer 7, opened at the same time as the MCM-D interconnectvias used to contact the capacitor. When forming openings to contact thetop electrode (35) of the capacitor openings are etched in the BCB layer(1^(st) dielectric, 7) to expose the bridge feet 33 b. During theformation of the 2^(nd) interconnect level the metal layers (9,10) fillnot only the vias 8 but also the openings to the bridge feet 33 b. Theseopenings thus allow anchorage of the bridge to the substrate or first(lower) interconnect level. Similar to the method in the previousembodiments, the cavity 34 is formed by sacrificial etching the BCBdielectric layer 7 after processing of the second metal interconnectlayers 9-10. The bridge 33 is anchored to the bridge feet 33 b and hencethe underlying dielectric BCB sacrificial layer 7 is removed locally torelease the bridge 33.

The process flow shown in FIG. 3 has to be modified to achieve thisstructure. Firstly, the patterning in steps 5 and 6 must be modified toprovide the interconnect 41 between the lower end of the inductor via 8and the bridge feet 33 b. In step 8 the BCB layer 7 patterning step ismodified to provide the via 8 from the inductor down to the first metallayers (2, 3, 4). The metal layer 9, 10 applied in the previousembodiments in steps 9 to 12 is used to form the bridge 33 as well asbonding pads 44. To achieve this the plating resist 11 of steps 10 to 12is patterned accordingly. The CPW line 32 is formed from the first metalinterconnect layer 2, 3, 4 but now runs parallel to the bridge ratherthan perpendicular to it. The main difference between the device of FIG.6 and that formed in accordance with the process of FIG. 3 is that thebridge 33 is made in the second metal interconnect layer 42 and theinterconnect between the inductor 45 of the MCM-D section and the bridge33 of the MEMS section is made in the first metal layers 41, i.e. in themetal layer first applied to the substrate, whereas in the scheme ofFIG. 3 the bridge is made using the third interconnect metal layer andinterconnect between the bridge and the inductor is made using thesecond interconnect metal layer 42. Also, in this embodiment, the twoelectrodes of the CPW ground line 32 are joined to the lower electrode33C of the capacitor of the switch whereas in the previous embodimentthe CPW line was joined to the bridge feet.

From the above certain of aspects of the present invention can beappreciated: a metal interconnect is formed with at least two layers ofmetal and one insulating layer therebetween. Additional metal andinsulating layers can be added to this basic structure to form a stackof interconnect layers insulated from each other by dielectric layers.At least one of the metal layers is used to form a part of a moveablecomponent of a MEMS device which is thus integrated into the productionflow for the interconnect. The MEMS device is located laterally adjacentto an interconnect portion of the device. The substrate on which thesedevices are formed need not be a semiconductor substrate—it can be asimpler substrate such as glass or quartz.

In the FIGS. 7 to 11 various embodiments of the present invention areshown all of which can be manufactured by processing steps as describedabove. In these figures the reference numerals relate to the samecomponents as described for the previous embodiments. The devices shownin FIGS. 7 to 11 are merely examples of the type of devices which can beformed in accordance with the present invention.

FIG. 7 shows a device in which there are two metallization layers and adielectric layer 7 in between formed on a substrate 1. At the bottom ofthe figures the equivalent electrical circuit is shown. A moveableelement 33, e.g. a part of a switch is formed as a bridge or cantileverbeam using the second metal layer which is also used to form fixedpassive devices such as an inductor 45. A resistor 40 is formed from thefirst metal layer and is contacted through a via 8 which runs from apart 44 of the second metal interconnect through the insulating layer 7.The resistor 40 is connected at its other side to one electrode 37 of acapacitor, 35, 36, and 37. The other electrode 35 of the capacitor isconnected to one end of an inductor 45. The other end of the inductor isconnected to one foot 33 b of the bridge 33 through a via 8 and thefirst metal layer. The signal path through the resistor, capacitor,inductor includes the bridge 33 which is constructed from the metal ofthe second interconnect layer. The lower electrode 33 c of the switchelement is formed in the first metal layer. The dielectric layer of theswitch element is the same as that of the capacitor. Connections wherenecessary are made through vias 8 from bonding pads 44 or similar in thesecond metallization layer to the first metallization layer or adjacentlayers. By this method individual passive components such as theresistor 40 or moveable components such as the switch 33 can be formedin separate areas of the substrate and then connected togetherelectrically using the first and/or the second metallization.

FIG. 8 shows a similar device to that of FIG. 7. The main differencesare that there are three layers of metal and two layers of intermediatedielectric 7, 12. The bridge 33 is still made from the second metallayer 10. The third metallization layer (13,14, and 15) is used forbonding pads 44. The third metal layer is in this example is used toform bond pads 44 to link the passive devices to the other chips or toanother substrate to which this device can be mounted). The first andsecond metallization layers are used for connecting the circuitcomponents to each other.

FIG. 9 shows a variant on the type of device shown in FIG. 8. Here againthree metallization layers are provided and two dielectric layers. Thebridge 33 is made in the third metallization layer (14,15) as wasillustrated in FIG. 3. Connections between the components can be madeusing the first metal layer (2,3,4) as for instance a connection (32)between the foot of the via 8 from one end of the inductor 45 and thefoot 33 b of the bridge 33, using the second metal layer, as forinstance between the resistor 40 and the inductor 45 or using the thirdmetal layer, as for instance between the inductor 45 and the via 8leading to the bridge 33 . . . .

FIG. 11 shows a further variant on the basic design which is consideredto be a best mode of carrying out the invention. The left-hand side,which comprises the passive components, is similar to the correspondingpart of FIG. 9. However, the signal path through the resistor, capacitorand inductor continues through the signal line 31 of the switch insteadof having the RF signal going along the bridge. The moveable element,the bridge, is formed in the third metallization layer at 90° to thebridge of FIG. 9. The lower figure shows a section through the middle ofthe cavity (34) showing how the bridge feet 33 b are connected to theCPW ground lines 32 which are formed from the second metallization layer(9,10). If the bridge (33) is pulled down the signal line (31) isconnected to the ground lines and hence the signal path is interrupted.FIG. 10 shows a top view of this device.

The devices described above may be integrated into other device in anysuitable manner. FIGS. 12 and 13 show two possible ways of integration.

In FIG. 12 shows how integrated circuits such as VLSI's may be bonded toan MCM-D substrate in accordance with the present invention. The MCM-Dsubstrate 1 includes a variable device such as a switch 33 as shown onthe left hand side of the figure. The MCM-D substrate 1, interconnectsand passive devices are constructed as described above with respect toembodiments of the present invention. The bonding pads constructedduring this process can be used to attach other devices such as a radiofrequency ASIC 50 and a CMOS mixed signal ASIC 51, e.g. by flip-chipbonding. In this embodiment an additional dielectric layer is formedapart from the layers 7,12.

FIG. 13 shows an alternative construction in which a module inaccordance with the present invention is connected to another module,e.g. by flip chip bonding. The module in accordance with the presentinvention is shown on the left with the switch 33 indicatedschematically. It has been inverted and the bonding pads 44 createdduring the process flow described above have been used to flip chip bondthe device to another module, e.g. another MCM-D module 1.

While the invention has been shown and described with reference topreferred embodiments, it will be understood by those skilled in the artthat various changes or modifications in form and detail may be madewithout departing from the scope and spirit of this invention.

1. An interconnect module device comprising: a substrate; aninterconnect section formed on the substrate, the interconnect sectioncomprising a plurality of fixed passive devices formed in at least aportion of at least first and second metal interconnect layers separatedby a dielectric layer, wherein the fixed passive devices are connectedto each other by at least one of the first and second interconnectlayers; and a passive device section formed on the substrate locatedlaterally adjacent to the interconnect section comprising one or morevariable passive devices, each comprising at least one moveable element,wherein the minimum distance between the substrate and the secondinterconnect layer is greater than the minimum distance between thesubstrate and the first interconnect layer.
 2. The device of claim 1,wherein the at least one moveable element comprises at least a portionof at least one of the first and second interconnect layers.
 3. Thedevice of claim 1, further comprising at least a third metalinterconnect layer separated from the first and second interconnectlayers by a second dielectric layer, wherein the at least one moveableelement is formed in at least one of the first, second, and thirdinterconnect layers.
 4. The device of claim 1, wherein at least one ofthe variable passive devices comprises an RF microelectromechanical(MEMS) device, wherein the RF MEMS device comprises at least onemoveable element formed in at least one of the interconnect layers. 5.The device of claim 1, further comprising a plurality of fixed microwaveintegrated passive devices (IPDs) connected with at least one of theinterconnect layers.
 6. The device of claim 1, wherein the moveableelement is configured to carry a communication signal.
 7. The device ofclaim 4, wherein the RF MEMS device is configured to be electricallyconnected between first and second electrical components, and themoveable element is configured to communicate a data carrying signalbetween the first and second electrical components.
 8. The device ofclaim 4, wherein the interconnect section and the RF MEMS device areformed on a multi-chip module with deposited thin film (MCM-D) substratetechnology.
 9. An interconnect module device comprising: a substrate; aninterconnect section formed on the substrate, the interconnect sectioncomprising a plurality of fixed passive devices formed in at least aportion of at least first and second metal interconnect layers separatedby a dielectric layer, wherein the fixed passive devices are connectedto each other by at least one of the first and second interconnectlayers; and a passive device section formed on the substrate locatedlaterally adjacent to the interconnect section comprising one or morevariable passive devices, each comprising at least one moveable element,wherein the at least one moveable element comprises at least a portionof at least one of the first and second interconnect layers.
 10. Thedevice of claim 9, wherein at least one of the variable passive devicescomprises an RF microelectromechanical (MEMS) device, wherein the RFMEMS device comprises at least one moveable element formed in at leastone of the interconnect layers.
 11. The device of claim 9, furthercomprising a plurality of fixed microwave integrated passive devices(IPDs) connected with at least one of the interconnect layers.
 12. Thedevice of claim 9, wherein the moveable element is configured to carry acommunication signal.
 13. The device of claim 10, wherein the RF MEMSdevice is configured to be electrically connected between first andsecond electrical components, and the moveable element is configured tocommunicate a data carrying signal between the first and secondelectrical components.
 14. The device of claim 10, wherein theinterconnect section and the RF MEMS device are formed on a multi-chipmodule with deposited thin film (MCM-D) substrate technology.
 15. Aninterconnect module device comprising: a substrate; an interconnectsection formed on the substrate, the interconnect section comprising aplurality of fixed passive devices formed in at least a portion of atleast first and second metal interconnect layers separated by adielectric layer, wherein the fixed passive devices are connected toeach other by at least one of the first and second interconnect layers;a passive device section formed on the substrate located laterallyadjacent to the interconnect section comprising one or more variablepassive devices, each comprising at least one moveable element; and atleast a third metal interconnect layer separated from the first andsecond interconnect layers by a second dielectric layer, wherein the atleast one moveable element is formed in at least one of the first,second, and third interconnect layers.
 16. The device of claim 15,wherein at least one of the variable passive devices comprises an RFmicroelectromechanical (MEMS) device, wherein the RF MEMS devicecomprises at least one moveable element formed in at least one of theinterconnect layers.
 17. The device of claim 15, further comprising aplurality of fixed microwave integrated passive devices (IPDs) connectedwith at least one of the interconnect layers.
 18. The device of claim15, wherein the moveable element is configured to carry a communicationsignal.
 19. The device of claim 16, wherein the RF MEMS device isconfigured to be electrically connected between first and secondelectrical components, and the moveable element is configured tocommunicate a data carrying signal between the first and secondelectrical components.